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has a piperazine connecting to a diphenylmethane with two fluorine atoms at para-positions
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Silicon's high relative abundance and low working potential makes it a prime candidate for the next-generation of batteries
Overview | Specifications | Applications | Example Device Data | Fabrication Method | References
Tungsten Diselenide (WSe2) Few-layer Film Size:1 * 1 cm 75 cd/A MaxHigh purity tungsten diselenide few layer film For applications in transistors, sensors, photovoltaics, and photodetectors devices Technical Data MSDS Applications Literature and Reviews Related Products Resources and Support Tungsten diselenide (WSe2) few layer film, CAS number 12067 46 8, based field effect transistors (FETs) can display high hole mobilities ranging from 350 cm2 Vs at room temperature to the saturating value of ~500 cm2 Vs below 50
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